Structure, stability, and electronic properties of niobium-germanium and tantalum-germanium clusters
نویسندگان
چکیده
منابع مشابه
Electronic properties of Manganese impurities in Germanium
The electronic properties of manganese in crystalline germanium have been investigated by means of deep level transient spectroscopy (DLTS). Mn was diffused in the material by a thermal treatment at 700◦C. Next to the deep levels of nickel and copper, which are known contaminants in Ge treated at high temperature, three not previously reported levels were observed. These two hole and one electr...
متن کاملStructures of Germanium Clusters: Where the Growth Patterns of Silicon and Germanium Clusters Diverge
We have performed a systematic ground state geometry search for Gen neutrals and cations in the n # 16 size range using density functional theory–local density approximation and gradient-corrected methods. Like their silicon analogs, medium-sized Ge clusters are stacks of tricapped trigonal prism subunits. However, the structures of Gen and Sin for n 13 and n $ 15 differ in details. The onset o...
متن کاملinvestigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولNovel derivatives of hypervalent germanium: synthesis, structure, and stability.
Syntheses of a series of novel germanium complexes, viz. RN(CH(2)CH(2)NC(6)F(5))(2)GeHal(2) (, R = Me, Hal = Cl; , R = Me, Hal = Br; , R = PhCH(2), Hal = Cl; , R = PhCH(2), Hal = Br), as well as MeN[CH(2)(2-C(4)H(3)N)](2)GeHal(2) (, Hal = Cl; , Hal = Br), by the reaction of GeHal(4) with dilithium salts of corresponding triamines are presented. PhCH(2)N(CH(2)CH(2)NSiMe(3))(2)GeCl(2) () was prep...
متن کاملSynthesis and properties of germanium nanowires
As a promising electronic material, Ge nanowire (GeNW) has attracted much attention for its low band gaps, high mobilities, and unprecedented dimensions. This article reviews recent research and advancement on this topic and summarizes many aspects of GeNWs, including preparation, surface chemistry, physical properties, functional devices, and controlled assembly. It is shown that GeNWs can be ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Molecular Modeling
سال: 2019
ISSN: 1610-2940,0948-5023
DOI: 10.1007/s00894-019-3988-5